Electronic substrate

ABSTRACT

An electronic substrate includes: an electronic element provided on a first face of a semiconductor substrate having a through hole; a passive element provided on a second face of the semiconductor substrate; a first part of an interconnection pattern provided on the second face of the semiconductor substrate; an insulating layer provided on the second face of the semiconductor substrate; and a second part of the interconnection pattern provided on the insulating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application of U.S. Ser. No. 13/787,225 filedMar. 6, 2013, which is a continuation application of U.S. Ser. No.12/782,076 filed May 18, 2010, now U.S. Pat. No. 8,416,578 issued Apr.9, 2013, which is a divisional application of U.S. Ser. No. 11/480,217filed Jun. 30, 2006, now U.S. Pat. No. 7,746,663 issued Jun. 29, 2010,which claims priority to Japanese Patent Application No. 2005-197393,filed Jul. 6, 2005, all of which are incorporated herein by reference intheir entireties.

BACKGROUND

1. Technical Field

The present invention relates to an electronic substrate, amanufacturing method for an electronic substrate, and an electronicdevice.

2. Related Art

Recently, as electronic devices are made smaller and more sophisticated,there are demands to reduce the size of semiconductor packagesthemselves and increase their density.

Japanese Unexamined Patent Application, First Publication No.2002-164468 and Japanese Unexamined Patent Application, FirstPublication No. 2003-347410 disclose techniques for making asemiconductor device (electronic substrate) smaller and moresophisticated by forming an inductor element on an active face (mainface) of the substrate.

However, such conventional techniques have problems such as thefollowing.

Since a passive element such as an inductor element is arranged near theactive element, electrical coupling occurs between the passive andactive elements, leading to possible deterioration in thecharacteristics of the active element and the overall characteristics ofthe semiconductor device using this substrate.

For example, in the above techniques, current leaking from the inductorelement may cause transistor characteristics and the like to fluctuate.

SUMMARY

An advantage of some aspects of the invention is to provide anelectronic substrate, a manufacturing method for an electronicsubstrate, and electronic device, which can suppress deterioration ofthe characteristics of the active element even when the passive elementis provided on the substrate.

A first aspect of the invention provides an electronic substrateincluding: a substrate having a first face on which an active region isformed, and a second face on an opposite side to the first face and onwhich a passive element is formed.

Therefore, in the electronic substrate of the invention, there is agreater distance between an active element formed in the active regionof the first face (e.g., an element which is formed by interconnectionson the substrate or mounted as a chip component) and a passive elementformed on the second face on the opposite side of the substrate withrespect to the first face.

This makes electrical coupling less likely between the passive elementand the active element.

Consequently, the invention can suppress deterioration incharacteristics of the active element, and in characteristics of theoverall system in which the electronic substrate is packaged in.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a penetrative conductive portionpenetrating through the substrate; and an electrode formed on the firstface, the passive element be electrically connected to the electrode viathe penetrative conductive portion.

This can easily ensure an electrical connection between the passiveelement and other elements via the electrode formed on the first face.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: an interconnection pattern arranged on orabove the second face of the substrate, the passive element beconfigured from one part of the interconnection pattern.

The passive element can be formed using the interconnection patternarranged on the second face side of the substrate or by connection,whichever is appropriate.

This makes it possible to obtain a thinner electronic substrate.

It is preferable that, in the electronic substrate of the first aspectof the invention, the interconnection pattern be formed by laminatedlayers, and the passive element is configured from one part of theinterconnection pattern.

When using the interconnection pattern to form the passive element, thepassive element can be formed using the interconnection patternlaminated from the plurality of layers or by connection, whichever isappropriate.

In this configuration, a capacitor or the like can easily be formed by,for example, arranging a dielectric layer (insulating layer) between theinterconnection patterns.

Instead of using an interconnection pattern to form the passive element,a chip component having the functions of the passive element may bepackaged on the second face of the substrate.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: an external connection terminal, at leastone part of the interconnection pattern be the external connectionterminal.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: an electronic component packaged on thesurface of the external connection terminal.

It is preferable that, in the electronic substrate of the first aspectof the invention, the passive element be contained in the electroniccomponent.

In this configuration, it is easy to achieve electrical connectionbetween other electronic components and the passive element, and betweenother electronic components and the active element.

It is preferable that, in the electronic substrate of the first aspectof the invention, a plurality of the substrates be connected togethervia the external connection terminal and be laminated.

This makes it easy to form a module having a multilayered substratewhich is configured by laminating a plurality of substrates.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a stress-relieving layer provided on thesecond face of the substrate, at least one part of the passive elementbe formed on the stress-relieving layer.

In this configuration, even if a thermal stress acts on the second faceof the substrate, reduction of the reliability and life of the passiveelement can be suppressed.

When the stress-relieving layer is an insulating layer, electricalcoupling between the passive element and the active element is even lesslikely to occur. This obtains advantages that deterioration in thecharacteristics and the like of the passive element can be prevented,floating capacitance from the passive element can be reduced, etc.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a ground electrode film formed on thesecond face of the substrate.

In this configuration, an electromagnetic shield effect can be obtainedbetween the passive element and elements formed on the first face of thesubstrate, such as the active element.

It is preferable that, in the electronic substrate of the first aspectof the invention, the ground electrode film be formed in correspondencewith the arrangement of the active region formed on the first face ofthe substrate.

In addition to obtaining an effective electromagnetic shield effect forthe active element, this is an effective countermeasure against noise.

It is preferable that, in the electronic substrate of the first aspectof the invention, the ground electrode film be formed according tospecifications based on the impedance of elements arranged on or abovethe second face.

Therefore, the invention enables impedance of elements provided on thesecond face side of the substrate to be controlled by adjustingspecifications of the ground electrode film, e.g., its thickness.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a protective film formed on the secondface of the substrate and protecting at least the passive element.

Therefore, the invention can protect the passive element and preventcorrosion and short-circuiting.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a semiconductor element formed in theactive region.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a semiconductor device packaged on theactive region and including the semiconductor element.

In this case, the semiconductor element may be configured as a switchingelement such as a transistor, formed using an interconnection pattern inthe active region, or a semiconductor device containing thesemiconductor element may be packaged in the active region.

It is preferable that, in the electronic substrate of the first aspectof the invention, no semiconductor element be packaged on the substrate.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: a second passive element provided on thefirst face of the substrate.

It is preferable that, in the electronic substrate of the first aspectof the invention, the second passive element be configured from one partof an interconnection pattern arranged on or above the first face of thesubstrate.

It is preferable that, in the electronic substrate of the first aspectof the invention, the second passive element be provided in a devicepackaged on or above the first face of the substrate.

A second aspect of the invention provides an electronic deviceincluding: the above described electronic substrate packaged in theelectronic device.

Therefore, the invention can suppress deterioration in characteristicsof the active element, and in characteristics of the overall systemwhich the electronic substrate is packaged in.

A third aspect of the invention provides a manufacturing method forelectronic substrate, including: forming an active region on a firstface of a substrate; and forming a passive element on a second face ofthe substrate.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: forming an electrode on the first face;and forming a penetrative conductive portion penetrating through thesubstrate and connecting the electrode to the passive element.

It is preferable that the electronic substrate of the first aspect ofthe invention further include: forming a ground electrode film on thesecond face of the substrate.

Therefore, in the electronic substrate of the invention, there is agreater distance between an active element formed in the active regionof the first face and a passive element formed on the second face on theopposite side of the substrate with respect to the first face.

This makes electrical coupling less likely between the passive elementand the active element.

Consequently, the invention can suppress deterioration incharacteristics of the active element, and in characteristics of theoverall system in which the electronic substrate is packaged in.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device of a firstembodiment of the invention.

FIG. 2 is a view of the semiconductor device from the direction of arrowA of FIG. 1.

FIGS. 3A to 3C are cross-sectional views of a manufacturing method ofthe semiconductor device of the first embodiment.

FIGS. 4A to 4C are cross-sectional views of a manufacturing method ofthe semiconductor device of the first embodiment.

FIGS. 5A to 5C are cross-sectional views of a manufacturing method ofthe semiconductor device of the first embodiment.

FIG. 6 is a perspective view of a manufacturing method of thesemiconductor device of the first embodiment.

FIG. 7 is a cross-sectional view of a semiconductor device of a secondembodiment.

FIG. 8 is a cross-sectional view of a semiconductor device of a thirdembodiment.

FIG. 9 is a perspective view of an electronic device in which anelectronic substrate of the invention is packaged.

FIG. 10 is a cross-sectional view of an example of another embodiment ofan electronic substrate.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Embodiments of an electronic substrate, a manufacturing method of theelectronic substrate, and an electronic device according to theinvention are explained with reference to FIGS. 1 to 9.

In the example described below, a semiconductor device element isprovided on an active region of a substrate, and passive elementsincluding a capacitor and a coil (inductor) are formed using aninterconnection pattern.

First Embodiment

FIG. 1 is a cross-sectional view of a semiconductor device 1 (electronicsubstrate) in which a semiconductor element is formed on a siliconsubstrate.

As shown in FIG. 1, the semiconductor device 1 includes a siliconsubstrate 10 (substrate), a connection section 20 formed on a first face10 a of the silicon substrate 10, and an interconnection section 41formed on a second face 10 b of the silicon substrate 10.

The connection section 20 is electrically connected to an externalapparatus P such as a printed wiring board.

The interconnection section 41 includes a land for packaging.

A semiconductor element such as an integrated circuit includes atransistor, a memory element, and the like, and is formed in apredetermined region (active region) of the first face 10 a of thesilicon substrate 10.

A groove 11 penetrating through the silicon substrate 10 in itsthickness direction is formed in the silicon substrate 10.

A conductive portion 12 (penetrative conductive portion) is formed byfilling the groove 11 with a conductive material.

An insulating film 13 is formed on side walls of the groove 11, andkeeps the conductive portion 12 electrically insulated from the siliconsubstrate 10.

A lower-face insulating layer 14 is formed over the surface of thesecond face 10 b of the silicon substrate 10 while avoiding the regionon which the groove 11 is formed.

The connection section 20 includes a foundation layer 21 (passivation),a first electrode 22, a second electrode 23, a first insulating layer24, and an interconnection section 30.

The foundation layer 21 is formed on the first face 10 a of the siliconsubstrate 10.

The first electrode 22 and the second electrode 23 are each formed in aplurality of regions on the foundation layer 21.

The first insulating layer 24 is formed so as to avoid the regions onwhich the first electrode 22 and the second electrode 23 are formed.

The interconnection section 30 is formed on the first insulating layer24.

The foundation layer 21 is formed using an insulating material, such assilicon dioxide (SiO₂) and silicon nitride (Si₃N₄).

A material such as titanium (Ti), titanium nitride (TiN), aluminum (Al),copper (Cu), or an alloy of these, may be used for the first electrode22 and the second electrode 23.

As shown in plan view in FIG. 2, a plurality of electrodes may be formedon the silicon substrate 10.

This embodiment describes only the first electrode 22 and the secondelectrode 23.

The second electrode 23 may be covered by the first insulating layer 24.

The first electrode 22 and the second electrode 23 are electricallyconnected to a semiconductor element such as the integrated circuitmentioned above.

As shown in FIGS. 1 and 2, the interconnection section 30 includes afirst interconnection 31, a metal film 32, a second insulating layer 33(stress-relieving layer), a second interconnection 34, and a thirdinsulating layer 35.

The first interconnection 31 is electrically connected to the firstelectrode 22 formed on the first insulating layer 24.

The metal film 32 is formed on a top face of the second electrode 23.

The second insulating layer 33 is formed on the first interconnection 31and the metal film 32.

The second interconnection 34 is formed on the second insulating layer33, and is electrically connected to the first interconnection 31.

The third insulating layer 35 is formed on the second interconnection34.

One part of the first interconnection 31 is exposed from the secondinsulating layer 33 to form a land section 36.

The land section 36 and the second interconnection 34 are electricallyconnected.

Bumps 37 are formed on the second interconnection 34.

The semiconductor device 1 is electrically connected via these bumps 37to the external apparatus P such as a printing wiring board.

The third insulating layer 35 is formed on the second insulating layer33 and on one part of the second interconnection 34, and is formed so asto avoid regions of the second interconnection 34 on which the bumps 37are formed.

The first electrode 22 is electrically connected to the bumps 37 via thefirst interconnection 31 and the second interconnection 34.

The second electrode 23 is formed on the foundation layer 21 formed onthe first face 10 a of the silicon substrate 10.

One part (rear face side) of the second electrode 23 is exposed to thegroove 11.

Consequently, a rear face 23 a of the second electrode 23 electricallyconnects to the first end 12 a of the conductive portion 12 in thegroove 11.

The second end 12 b of the conductive portion 12 is electricallyconnected to an interconnection 42 formed on the second face 10 b of thesilicon substrate 10.

That is, the second electrode 23 can be electrically connected to anelectronic element 300 provided on the second face 10 b of the siliconsubstrate 10.

As materials of the first interconnection 31 and the secondinterconnection 34, gold (Au), copper (Cu), titanium (Ti), tungsten (W),titanium tungsten (TiW), titanium nitride (TiN), nickel (Ni), nickelvanadium (NiV), chrome (Cr), aluminum (Al), and palladium (Pd), can beused.

The first interconnection 31 and the second interconnection 34 mayinclude a single-layer structure of one of the above materials, or amultilayer structure obtained by combining a plurality of them.

The first insulating layer 24, the second insulating layer 33, and thethird insulating layer 35 may be formed from a resin (synthetic resin).

The first insulating layer 24, the second insulating layer 33, and thethird insulating layer 35 can be formed from any type of insulatingmaterial such as polyimide resin, silicone-modified polyimide resin,epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin,benzocyclobutene (BCB), and polybenzoxazole (PBO).

The first insulating layer 24 may be formed from an insulating materialsuch as silicon oxide (SiO₂) and silicon nitride (Si₃N₄).

It is preferable that the material used for the metal film 32 be thesame as the material used for the first interconnection 31 and thesecond interconnection 34.

As the material of the metal film 32A, Au, TiW, Cu, Cr, Ni, Ti, W, NiV,and Al can be used.

The metal film 32 can also be formed by laminating these metals.

Incidentally, it is preferable that the metal film 32 (in the case of alaminated structure, at least one layer thereof) be formed using amaterial having higher resistance to corrosion than the electrodes, suchas Au, TiW, and Cr.

This can prevent corrosion of the electrodes and generation ofelectrical faults.

The interconnection section 41 includes a foundation layer 14 (rear faceinsulating layer, passivation), an interconnection 43 (interconnectionpattern), an insulating layer 44, interconnections 42 and 45,interconnections (interconnection patterns) 42, 45, and 46, and aninsulating layer 47 covering part of the foundation layer 14.

The foundation layer 14 is formed on the second face 10 b of the siliconsubstrate 10.

The interconnection 43 is formed on the foundation layer 14.

The insulating layer 44 is formed on the foundation layer 14 and coversthe interconnection 43.

The interconnections 42 and 45 are formed on the foundation layer 14 andon the insulating layer 44.

The interconnection 46 is formed on the insulating layer 44.

The insulating layer 47 covers the interconnections 42, 45, and 46, andpart of the foundation layer 14.

A first end of the interconnection 42 is formed on the foundation layer14 and electrically connected to the second end 12 b of the conductiveportion 12.

A second end of the interconnection 42 is arranged on the insulatinglayer 44.

One part of the interconnection 42 is exposed on the insulating layer 44via an opening in the insulating layer 47.

This forms a land section 48 (external connection terminal) which isexposed from the opening in the insulating layer 47.

Ends of the interconnection 45 are formed on the insulating layer 44 andare faced the interconnection 43 via the insulating layer 44.

That is, the interconnection 45 and the interconnection 43 face eachother with the insulating layer 44 therebetween, forming a laminatedcapacitor C (passive element).

Here, a dielectric substance is used to form the insulating layer 44.

Similar to the first insulating layer 24, the second insulating layer33, and the third insulating layer 35 described above, the insulatinglayers 44 and 47 and the foundation layer 14 can be formed from any typeof dielectric insulating material such as polyimide resin,silicone-modified polyimide resin, epoxy resin, silicone-modified epoxyresin, acrylic resin, phenol resin, benzocyclobutene (BCB), andpolybenzoxazole (PBO).

One part of the interconnection 45 is exposed on the insulating layer 44via an opening in the insulating layer 47.

This forms a land section (external connection terminal) 49 which isexposed from the opening in the insulating layer 47.

The interconnection 46 forms a spiral inductor (passive element) L orthe like.

Incidentally, FIG. 1 depicts the inductor L in simplification.

The capacitor C and the inductor L are connected via a penetrativeconductive portion (not shown) to a semiconductor element and the firstelectrode 22 formed on the first face 10 a side.

Similar to the first interconnection 31 and the second interconnection34 described above, the interconnections 42, 43, 45, and 46 are formedfrom a single-layer material such as gold (Au), copper (Cu), titanium(Ti), tungsten (W), titanium tungsten (TiW), titanium nitride (TiN),nickel (Ni), nickel vanadium (NiV), chrome (Cr), aluminum (Al), andpalladium (Pd), or from a multilayered structure obtained by combining aplurality of these materials.

Subsequently, a manufacturing method for the semiconductor device 1 isexplained with reference to FIGS. 3A to 6.

As shown in FIG. 6, in this embodiment, a plurality of the semiconductordevices 1 is formed simultaneously on the same silicon substrate(substrate) 10.

The explanation of FIGS. 3A to 5C describes the formation of onesemiconductor device 1.

As shown in FIG. 3A, after forming the foundation layer 21 on the firstface 10 a of the silicon substrate 10, the first electrode 22 and thesecond electrode 23 are formed on the foundation layer 21.

The first insulating layer 24 is then formed on the first electrode 22and the second electrode 23, and insulating material covering them isremoved by conventional methods of photolithography and etching.

It is not absolutely necessary to remove the insulating materialcovering the second electrode 23.

The first interconnection 31 is then formed on the first insulatinglayer 24 including the first electrode 22, and the metal film 32 isformed on the top face of the second electrode 23.

The first interconnection 31 is formed by a method such as sequentialsputtering of TiW and Cu followed by plating of Cu.

The second insulating layer 33 is formed so as to cover the firstinterconnection 31 and the metal film 32, and regions of the secondinsulating layer 33 corresponding to the land sections 36 are removed bya conventional photolithography method, whereby parts of the firstinterconnection 31 are exposed and become the land sections 36.

The second interconnections 34 are formed on the second insulating layer33 so as to connect to the land sections 36.

The third insulating layer 35 is formed so as to cover the secondinsulating layer 33 and the second interconnections 34 while avoidingthe regions on which the bumps 37 are formed.

As shown in FIG. 3B, the second face 10 b of the silicon substrate 10 iscoated with a photo resist 40, and the photo resist 40 is thenpatterned.

Using the patterned photo resist 40 as a mask, dry etching is performedso as to remove parts of the silicon substrate 10 and the foundationlayer 21 that correspond to the position of the second electrode 23.

As shown in FIG. 3C, etching is performed until the rear face 23 a ofthe second electrode 23 is exposed, and the groove 11 is formed andetched from the second face 10 b of the silicon substrate 10 to thefirst face 10 a.

While here the photo resist 40 is used as a mask, the invention is notlimited to this configuration. For example, an SiO₂ film may be used asa hard mask, or a photo resist mask may be combined with a hard mask.

The etching method is not limited to dry etching, wet etching, laserprocessing, or both may be used.

As shown in FIG. 4A, a rear face insulating layer 14 (foundation layer)and an insulating film 13 are then formed on the second face 10 b of thesilicon substrate 10 and on inner walls of the groove 11.

The rear face insulating layer 14 and the insulating film 13 preventcorrosion of the silicon substrate 10 caused by current leaks, oxygen,water, and so on.

As materials for forming the rear face insulating layer 14 and theinsulating film 13, tetra ethyl ortho silicate: Si(OC₂H₅)₄ (hereinafterTEOS) formed using plasma enhanced chemical vapor deposition (PECVD),i.e. PE-TEOS, and TEOS using ozone CVD, i.e. silicon oxide (SiO₂) formedusing O₃-TEOS and CVD, can be used.

The rear face insulating layer 14 and the insulating film 13 need onlyhave insulating properties, other materials such as resin may be use.

The insulating film 13 formed in the rear face 23 a section of thesecond electrode 23 is removed by dry etching or laser processing suchthat the insulating film 13 remains only on the side walls of the groove11 as shown in FIG. 4B.

As shown in FIG. 4C, the inside of the groove 11 is plated using anelectrochemical plating (ECP) method to form a conductive material forforming the conductive portion 12 in the groove 11.

The first end 12 a of the conductive portion 12 and the second electrode23 exposed in the groove 11 are electrically connected via the rear face23 a of the second electrode 23.

As the conductive material for forming the conductive portion 12, forexample, copper (Cu) can be used. The groove 11 is filled with copper(Cu), the conductive portion 12 is formed in the groove 11.

The method of forming the conductive portion 12 in this embodimentincludes, for example, a step of sputtering (laminating) TiN and Cu, anda step of plating Cu.

Alternatively, a step of sputtering (laminating) TiW and Cu, and a stepof plating Cu may be included.

The described-above method of the forming of the conductive portion 12is not limited. The groove 11 may be filled with a conductive paste, amolten metal, metal wiring, etc.

While in this embodiment, the groove 11 is filled with the conductiveportion 12, it is unnecessary to fill completely. Instead, theconductive portion 12 may be formed along the inner walls of the groove11 and electrically connected via the rear face 23 a of the secondelectrode 23.

After the forming of the conductive portion 12, the interconnection 43is formed on the second face 10 b of the silicon substrate 10.

As forming method of the interconnection 43, sputtering, plating, anddroplet discharge can be used.

After the forming of the interconnection 43, the insulating layer 44 isformed so as to cover the interconnection 43 and a region which isseparated from the conductive portion 12.

The insulating layer 44 is formed using the same method as for theinsulating layers 24, 33, and 35 mentioned above.

As shown in FIG. 5A, the interconnection 46 is then formed on theinsulating layer 44, and the interconnections 42 and 45 are formed withthe rear face insulating layer 14 and the insulating layer 44therebetween.

Similar to the interconnection 43, the interconnections 42 and 45 can beformed by a method such as sputtering, plating, and droplet discharge.

As shown in FIG. 5B, when the interconnections 42, 45, and 46 areformed, the insulating layer 47 is formed so as to cover them and partof the rear face insulating layer 14.

As shown in FIG. 5C, insulating material covering the interconnections42 and 45 and corresponding to the land sections 48 and 49 is removed byconventional methods of photolithography and etching. The land sections48 and 49 are formed.

Bumps of Pb-free solder or the like are mounted on the secondinterconnection 34 formed on the side of the first face 10 a of thesilicon substrate 10.

When the forming of the bumps 37, solder balls may be mounted on thesecond interconnection 34 or a solder paste may be printed on it.

As shown in FIG. 6, the above steps simultaneously form a plurality ofsemiconductor devices on a silicon substrate 100.

As shown in FIG. 6, a dicing device 110 is then used to dice (cut) thesilicon substrate 100 into a plurality of individual semiconductordevices 1.

In this way, a plurality of semiconductor devices 1 can be formed almostsimultaneously on the silicon substrate 100, which is then cut intoindividual semiconductor devices 1 to obtain the semiconductor device 1of FIG. 1.

This enables the semiconductor device 1 to be manufactured efficiently,and reduces its cost.

As described above in this embodiment, passive elements including thecapacitor C and the inductor L are formed on the second face 10 b, andactive elements such as semiconductor elements are formed in an activeregion on the first face 10 a opposite the second face 10 b.

Therefore, the active and passive elements can be separated by a widedistance with the silicon substrate 10 between them.

Consequently in this embodiment, electrical coupling between the activeand passive elements is less likely to occur, and deterioration in thecharacteristics of the active elements can be suppressed.

Since this embodiment can suppress deterioration in the characteristicsof an overall system (electro-optical device or electronic device) whichincludes the semiconductor device 1, it is possible to form an ultrahigh-density module.

In particular in this embodiment, since the semiconductor element isformed on the active region, a p-type or n-type semiconductor well layeris formed in the middle layer, it is possible to further suppress thatelectrical coupling will occur between the active elements and thepassive elements.

Furthermore, in this embodiment, since the interconnections 45 and 46forming some of the passive elements are arranged on the insulatinglayer 44 which functions as a stress-relieving layer, electricalcoupling is less likely to occur between the rear side of thesemiconductor element and the passive elements.

Therefore, reduction in the characteristics of the passive elements canbe suppressed, and floating capacitance that is generated from thepassive elements can be suppressed.

Furthermore, in this embodiment, the land sections 48 and 49 enable thesemiconductor device 1 to be easily connected to other electroniccomponents.

Second Embodiment

Subsequently, a second embodiment of a semiconductor device (electronicsubstrate) is explained with reference to FIG. 7.

In FIG. 7, like constituent parts to those of FIGS. 1 to 6 aredesignated with like reference numerals and are not repetitiouslyexplained.

The semiconductor device 1 of the second embodiment includes a groundelectrode film G.

As shown in FIG. 7, in this embodiment, the ground electrode film G isformed on the foundation layer 14.

The ground electrode film G is grounded by connecting it to a groundingwiring (not shown).

The ground electrode film G is formed in a region separated from theinterconnection 43 by using the same forming step and by using samematerial as the interconnection 43.

More specifically, the ground electrode film G is arranged opposite theactive region of the first face 10 a, or between the active region andthe passive elements.

In the semiconductor device 1 of this embodiment, the ground electrodefilm G functions as an electromagnetic shield, it is possible tosuppress noise being transmitted from the passive elements to the activeelements, and vice versa.

In this embodiment, impedance of electronic components (electronicelements) which are connected to the land sections 48 and 49 can becontrolled by adjusting specifications such as growth thickness and sizeof the ground electrode film G.

Third Embodiment

Subsequently, a third embodiment of a semiconductor device (electronicsubstrate) is explained with reference to FIG. 8.

In FIG. 8, a plurality of semiconductor elements 111 including bumps 110are laminated in the thickness direction of the semiconductor device 1.

The bumps 110 are connected to the land sections 48 and 49 of FIG. 1.

This semiconductor device 1 constitutes a laminated-type semiconductordevice.

Similar to the first embodiment, the semiconductor elements 111 mayinclude active and passive elements, or only passive elements.

The semiconductor device 1 with the above configuration can furtherenhance the packaging density.

This embodiment also enables one system block to be constructed bylaminating semiconductor devices having different functions.

Electronic Device

FIG. 9 is a perspective view of a mobile telephone 300. The mobiletelephone 300 is an example of an electronic device which theabove-mentioned semiconductor device 1 is packaged in.

By packaging the electronic component of this invention, which is madesmaller, thinner, and more sophisticated, a small, high-quality mobiletelephone 300 can be obtained.

In addition to a mobile telephone, the semiconductor device 1 can bepackaged in an electronic device including an electro-optical devicesuch as a liquid crystal display device, an organic electroluminescentdisplay device, and a plasma-type display device.

While exemplary embodiments of the invention have been described abovewith reference to the accompanying drawings, these are not to beconsidered as limitative of the invention.

Shapes, combinations and the like of the constituent members illustratedabove are merely examples, and various modifications based on designrequirements and the like can be made without departing from the spiritor scope of the invention.

For example, while the above-described embodiments describesemiconductor devices in which a semiconductor element is contained inan electronic substrate, it is not absolutely necessary for theelectronic substrate to contain the semiconductor element.

Instead, an external device such as a semiconductor device may bepackaged in the active region.

It is not absolutely necessary for the electronic substrate according tothe invention to include a semiconductor element.

For example, the invention may be configured as a silicon substratewherein no external device is packaged in a mount region (active region)for an external device (unpackaged state), and passive elements areformed on a face on an opposite side to the mount region, e.g., asemiconductor chip.

While in the above-described embodiments, an active element such as asemiconductor element, the capacitor C, and the inductor L are containedin the silicon substrate 10, the invention is not limited to thisconfiguration.

It is acceptable to package an active element, such as a semiconductorchip, in the active region, and to package a passive element chip havingthe functions of a capacitor, an inductor, and the like, on a face on anopposite side to the active region.

As for example shown in FIG. 10, connection pads 52 and 52 of anelectronic component 51 including the passive elements described-abovemay be connected at the surface of the land sections 48 and 49 of thesilicon substrate 10 in a packaged configuration.

This configuration obtains the same effects and advantages as theabove-described embodiments.

Furthermore, an electronic component which does no include passiveelements (e.g., a semiconductor device) may be packaged on the surfaceof the land sections 48 and 49 of the silicon substrate 10 whichcontains the passive elements shown in FIG. 1.

While in the above-described embodiments, a semiconductor element isformed on the first face 10 a of the silicon substrate 10, otherelectronic elements may be formed instead, the only requirement beingthat they do not interfere with the bumps 37, the secondinterconnections 34, and so on.

In this case, a semiconductor device and the passive elementsmentioned-above can be selected as the electronic elements.

When providing a passive element as a second passive element on thefirst face 10 a side, even when the passive element is formed using theinterconnection 42, an electronic device including the second passiveelement may be packaged on the first face 10 a in the same manner as onthe second face 10 b side.

While the above-described embodiments describe the capacitor C and theinductor L as examples of passive elements, in addition to these, aresistance can be formed by partially adjusting the thickness, width,and the like of the interconnection pattern.

While the above-described embodiments describe an example using a spiralinductor as the inductor L, a toroidal inductor may be formed andpackaged instead.

While in the above-described embodiments, the conductive portion 12penetrating through the silicon substrate 10 connects electrodes on thefirst face 10 a side to passive elements on the second face 10 b side,they may be connected without using a penetrative conductive portionsuch as the conductive portion 12 by, for example, using aninterconnection pattern formed on a side face (end face) of the siliconsubstrate 10.

It is also acceptable to form a protective film by covering the secondface 10 b side of the silicon substrate 10 of the above-describedembodiments with a resin material such as a solder resist.

It is preferable that this protective film cover at least the passiveelements.

As forming method of the protective film, photolithography, dropletdischarge, printing, and dispensing can be used.

While the above-described embodiments describe examples using a siliconsubstrate on which a semiconductor element is formed, an identicalstructure can be applied in substrates such as a compound semiconductorsubstrate, a glass substrate on which a semiconductor device such aspoly-silicon is formed, a quartz substrate, and an organic substrate onwhich an organic semiconductor is formed.

What is claimed is:
 1. An electronic substrate comprising: asemiconductor substrate having a first face, a second face, and athrough hole which communicatively interconnects the first face and thesecond face, the through hole having an inner wall; an electronicelement provided on the first face; a first insulating layer providedover the first face of the semiconductor substrate; a second insulatinglayer provided over the first insulating layer; a first part of aninterconnection pattern provided over the first insulating layer; asecond part of the interconnection pattern provided over the secondinsulating layer, the second part of the interconnection pattern beingdirectly connected to the first part of the interconnection pattern; anda third insulating layer covering a surface of the inner wall of thethrough hole.
 2. The electronic substrate according to claim 1, whereinthe second insulating layer is a resin.
 3. The electronic substrateaccording to claim 1, wherein the electronic element is formed from asemiconductor element integrated with the semiconductor substrate. 4.The electronic substrate according to claim 1, further comprising: anelectrode on the second face of the semiconductor substrate; and apenetrative conductive portion penetrating the semiconductor substrateand connecting the electrode to the first part of the interconnectionpattern.
 5. The electronic substrate according to claim 2, wherein theresin is one or more compounds selected from the group consisting of apolyimide resin, a silicone-modified polyimide resin, an epoxy resin, asilicone-modified epoxy resin, an acrylic resin, a phenol resin,benzocyclobutene, and polybenzoxazole.
 6. The electronic substrateaccording to claim 1, further comprising: a fourth insulating layerprovided on the first part of the interconnection pattern.